Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

Abstract

Ferroelectric BaTiO₃ films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO₃ films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO₃ films having (00l), (l0l) or (l0l)/(l00) texture present a very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated with silicon, offer opportunities to exploit the anisotropic optical and dielectric properties of ferroelectric BaTiO₃.