NaBaMIIIQ3 (MIII = Al, Ga; Q = S, Se): first quaternary chalcogenides with isolated edge-sharing (MIII2Q6)6− dimers

Ailijiang Abudurusuli; Kui Wu; Yilimiranmu Rouzhahong; Zhihua Yang; Shilie Pan

doi:10.1039/C8DT04048F

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NaBaM^IIIQ₃ (M^III = Al, Ga; Q = S, Se): first quaternary chalcogenides with isolated edge-sharing (M ^III₂Q₆)⁶⁻ dimers†

Ailijiang Abudurusuli,^ab Kui Wu,

*^a Yilimiranmu Rouzhahong,^a Zhihua Yang

^a and Shilie Pan

*^a

Author affiliations

* Corresponding authors

^a CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China
E-mail: slpan@ms.xjb.ac.cn, wukui@ms.xjb.ac.cn

^b University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

In this study, a new series of NaBaM^IIIQ₃ (M^III = Al, Ga; Q = S, Se) compounds featuring the first discovered isolated edge-shared (M^III₂Q₆)⁶⁻ dimers in known quaternary chalcogenides were synthesized. All compounds showed clear optical anisotropy (Δn = 0.04–0.12) mainly derived from the contribution of isolated (M^III₂Q₆)⁶⁻ dimers by the real-space atom-cutting method.

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Article information

DOI: https://doi.org/10.1039/C8DT04048F
Article type: Communication
Submitted: 09 Oct 2018
Accepted: 19 Oct 2018
First published: 22 Oct 2018

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Dalton Trans., 2018,47, 16044-16047

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NaBaM^IIIQ₃ (M^III = Al, Ga; Q = S, Se): first quaternary chalcogenides with isolated edge-sharing (M^III₂Q₆)⁶⁻ dimers

A. Abudurusuli, K. Wu, Y. Rouzhahong, Z. Yang and S. Pan, Dalton Trans., 2018, 47, 16044 DOI: 10.1039/C8DT04048F

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