Low-voltage and high-performance field-effect transistors based on ZnxSn1−xO nanofibers with a ZrOx dielectric

Abstract

One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composition ratios were prepared by electrospinning. The surface morphology, crystallinity, grain size distribution, and chemical composition of the nanofibers were investigated. Meanwhile, field-effect transistors (FETs) based on ZnSnO nanofiber networks (NFNs) with various composition ratios were integrated and investigated. For optimized Zn_0.3Sn_0.7O NFNs FETs, the device based on an SiO₂ dielectric exhibited a high electrical performance, including a high on/off current ratio (I_on/off) of 2 × 10⁷ and a field-effect mobility (μ_FE) of 0.17 cm² V⁻¹ s⁻¹. When a high-permittivity (κ) ZrO_x thin film was employed as the dielectric in Zn_0.3Sn_0.7O NFNs FETs, the operating voltage was substantially reduced and a high μ_FE of 7.8 cm² V⁻¹ s⁻¹ was achieved. These results indicate that the Zn_0.3Sn_0.7O NFNs/ZrO_x FETs exhibit great potency in low-cost and low-voltage devices.