Issue 19, 2018, Issue in Progress

Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

Abstract

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor–solid–solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current–voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.

Graphical abstract: Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

Supplementary files

Article information

Article type
Paper
Submitted
31 Oct 2017
Accepted
08 Mar 2018
First published
14 Mar 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 10294-10301

Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

M. Coşkun, M. M. Ombaba, F. Dumludağ, A. Altındal and M. S. Islam, RSC Adv., 2018, 8, 10294 DOI: 10.1039/C7RA11987A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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