Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Hang Lu; Yingying Chen; Qing Chang; Shuai Cheng; Yamei Ding; Jie Chen; Fei Xiu; Xiangjing Wang; Chaoyi Ban; Zhengdong Liu; Juqing Liu; Wei Huang

doi:10.1039/C8RA01928B

Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Hang Lu,^a Yingying Chen,^a Qing Chang,^a Shuai Cheng,^a Yamei Ding,^a Jie Chen,^a Fei Xiu,^a Xiangjing Wang,^a Chaoyi Ban,^a Zhengdong Liu,^a Juqing Liu

*^a and Wei Huang*^a

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* Corresponding authors

^a Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
E-mail: iamjqliu@njtech.edu.cn, iamwhuang@njtech.edu.cn

Abstract

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10³ in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

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Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

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Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

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