Issue 47, 2018, Issue in Progress

A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

Abstract

In this work, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (∼50 fJ μm−2 per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 × 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.

Graphical abstract: A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

Supplementary files

Article information

Article type
Paper
Submitted
23 May 2018
Accepted
13 Jul 2018
First published
25 Jul 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 26549-26553

A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

L. Tu, S. Yuan, J. Xu, K. Yang, P. Wang, X. Cui, X. Zhang, J. Wang, Y. Zhan and L. Zheng, RSC Adv., 2018, 8, 26549 DOI: 10.1039/C8RA04403A

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