Issue 68, 2018, Issue in Progress

Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

Abstract

Solution-processed zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO2 films were obtained by spin-coating and annealing at 300 °C through the direct condensation reaction between them. The ZrO2 films exhibited a high dielectric constant near 10, and a low leakage current density of 5 × 10−8 A cm−2 at a field of 1 MV cm−1. High mobility p-type pentacene TFTs were fabricated using the ZrO2 dielectrics, with a saturation field-effect mobility of 3.7 cm2 V−1 s−1, a threshold voltage of −2.7 V, an on/off ratio of 1.1 × 106 and a subthreshold swing of 0.65 V dec−1.

Graphical abstract: Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

Supplementary files

Article information

Article type
Paper
Submitted
18 Aug 2018
Accepted
07 Nov 2018
First published
22 Nov 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 39115-39119

Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

J. Seon, N. Cho, G. Yoo, Y. S. Kim and K. Char, RSC Adv., 2018, 8, 39115 DOI: 10.1039/C8RA06911E

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements