Issue 16, 2018

Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

Abstract

The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective HxWO3−y with that of WO3 and bulk defective e-HxWO3−y. It shows that surface OVs are key hot spots for faradaic reactions in HxWO3−y, which promotes the formation of certain W5+ and W4+ during the reduction process.

Graphical abstract: Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

Supplementary files

Article information

Article type
Communication
Submitted
30 Jan 2018
Accepted
21 Mar 2018
First published
21 Mar 2018

J. Mater. Chem. A, 2018,6, 6780-6784

Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

H. Wang, R. Fan, J. Miao, J. Chen, S. Mao, J. Deng and Y. Wang, J. Mater. Chem. A, 2018, 6, 6780 DOI: 10.1039/C8TA00981C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements