Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Abstract

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD). The films were fully characterised by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The optoelectronic properties of the films were determined using UV/vis spectroscopy and Hall effect measurements. The AGZO film displayed the lowest resistivity (1.3 × 10⁻² Ω cm) and highest carrier mobility (7.9 cm² V⁻¹ s⁻¹), due the relatively low amount of disorder in the structure. The incorporation of In³⁺ resulted in the most disorder in the structure due to its large radius, which led to an increase in optical absorption, and a decrease in resistivity.