Issue 38, 2018
From the journal:

Journal of Materials Chemistry C

Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Hyukjoon Yoo,a   Young Jun Tak,a   Won-Gi Kim,a   Yeong-gyu Kima  and  Hyun Jae Kim*a  

* Corresponding authors

a School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
E-mail: hjk3@yonsei.ac.kr

Abstract

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

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Article information

DOI
https://doi.org/10.1039/C8TC90192A
Article type
Correction
Submitted
14 Sep 2018
Accepted
14 Sep 2018
First published
20 Sep 2018
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2018,6, 10376-10376

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Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

H. Yoo, Y. J. Tak, W. Kim, Y. Kim and H. J. Kim, J. Mater. Chem. C, 2018, 6, 10376 DOI: 10.1039/C8TC90192A

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