Issue 31, 2019

Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

Abstract

A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

Graphical abstract: Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

Supplementary files

Article information

Article type
Communication
Submitted
04 Feb 2019
Accepted
19 Mar 2019
First published
22 Mar 2019

Chem. Commun., 2019,55, 4586-4588

Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

K. Awaya, A. Takashiba, T. Taniguchi, M. Koinuma, T. Ishihara and S. Ida, Chem. Commun., 2019, 55, 4586 DOI: 10.1039/C9CC01039D

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