Issue 4, 2019

Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy

Abstract

The detection of broad wavelengths from the near-ultraviolet to near-infrared regime using functional semiconductor nanostructures is of great importance in either fundamental research or technological application. In this work, we report high-performance optoelectronic nanodevices based on a single Te nanobelt grown by molecular beam epitaxy. The photodetector demonstrates a fast photoresponse time (a rise time of 510 μs and a decay time of 300 μs), a high photoresponsivity of 254.2 A W−1, an external quantum efficiency of 8.6 × 104%, a large detectivity of 8.3 × 108 Jones, on/off ratio of 3 orders, broadband response from the near-ultraviolet to near-infrared region, and robust photocurrent stability and reproducibility. The photodetector with superior performances based on the individual one-dimensional Te nanobelt consequently shows great promise for further optoelectronic device applications.

Graphical abstract: Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy

Supplementary files

Article information

Article type
Paper
Submitted
01 Oct 2018
Accepted
21 Dec 2018
First published
24 Dec 2018

Nanoscale, 2019,11, 1879-1886

Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy

S. Kang, T. Dai, X. Ma, S. Dang, H. Li, P. Hu, F. Yu, X. Zhou, S. Wu and S. Li, Nanoscale, 2019, 11, 1879 DOI: 10.1039/C8NR07978A

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