Issue 13, 2019

The shielding effects of a C60 cage on the magnetic moments of transition metal atoms inside the corner holes of Si(111)-(7 × 7)

Abstract

The strong interaction between transition metal (TM) atoms and semiconductor surface atoms may diminish the magnetic moments of the TM atoms and prevent them from being used as single atom spin-based devices. A carbon cage that can encapsulate TM atoms and isolate them from interacting with surface atoms is considered to protect the magnetic moments of the TM atoms. We have studied the magnetic moments of Fe, Co, and Ni atoms adsorbed inside the corner hole of Si(111)-(7 × 7) by using first-principles calculations based on the density functional theory. The results show that when Co and Ni atoms are directly adsorbed inside the corner hole, the magnetic moments are 1.353μB and 0, respectively. However when a C60 cage is used to encapsulate the atoms, the magnetic moments increase to 1.849μB and 0.884μB, respectively. The results show a clear protecting effect of a carbon cage. For Fe with and without C60, the magnetic moments are 2.909μB and 2.825μB, respectively. The presence of a C60 cage can also maintain their magnetic moments. Further analysis shows that the TM atoms possess magnetic moments when the conduction electrons are localized around them. All the results can be well understood in the framework of the Anderson impurity model. Our results demonstrate that a carbon cage may effectively protect the magnetic moments of TM atoms. This provides a new strategy for developing single atom spin-based devices on semiconductors.

Graphical abstract: The shielding effects of a C60 cage on the magnetic moments of transition metal atoms inside the corner holes of Si(111)-(7 × 7)

Supplementary files

Article information

Article type
Paper
Submitted
06 Feb 2019
Accepted
06 Mar 2019
First published
07 Mar 2019

Nanoscale, 2019,11, 6228-6234

The shielding effects of a C60 cage on the magnetic moments of transition metal atoms inside the corner holes of Si(111)-(7 × 7)

X. Shao, L. Li, X. Shi, Y. Ma, X. Wu and K. Wang, Nanoscale, 2019, 11, 6228 DOI: 10.1039/C9NR01177C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements