Issue 18, 2019, Issue in Progress

Influence of surface tension-driven network parameters on backflow strength

Abstract

Surface tension-driven flow is widely used, owing to its spontaneous motion, in microfluidic devices with single channel structures. However, when multiple channels are used, unwanted backflow often occurs. This prevents precise and sophisticated solution flow, but has been rarely characterized. We hypothesize that, with an analytical model, the parameters that influence backflow can be systematically characterized to minimize the backflow. In a microfluidic network, inlet menisci and channels are modeled as variable pressure sources and fluidic conductors, respectively. Through the model and experiment, the influence of each network element on the backflow strength is studied. Backflow strength is affected by the interplay of multiple inlet-channel elements. With the decrease (increase) of the fluidic channel conductance (inlet size), the backflow pressure of the corresponding inlet decreases. On the other hand, backflow volume reaches its peak value during the radius change of the corresponding inlet. In networks consisting of five inlet-channel elements, backflow pressure decreases with increasing step number. Our results provide the foundations for microfluidic networks driven by the Laplace pressure of inlet menisci.

Graphical abstract: Influence of surface tension-driven network parameters on backflow strength

Supplementary files

Article information

Article type
Paper
Submitted
27 Nov 2018
Accepted
26 Mar 2019
First published
02 Apr 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 10345-10351

Influence of surface tension-driven network parameters on backflow strength

Y. Lee, I. Seder and S. Kim, RSC Adv., 2019, 9, 10345 DOI: 10.1039/C8RA09756A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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