Issue 13, 2019

Structural exploration of AuxM (M = Si, Ge, Sn; x = 9–12) clusters with a revised genetic algorithm

Abstract

We used a revised genetic algorithm (GA) to explore the potential energy surface (PES) of AuxM (x = 9–12; M = Si, Ge, Sn) clusters. The most interesting finding in the structural study of AuxSi (x = 9–12) is the 3D (Au9Si and Au10Si) → quasi-planar 2D (Au11Si and Au12Si) structural evolution of the Si-doped clusters, which reflects the competition of Au–Au interactions (forming a 2D structure) and Au–Si interactions (forming a 3D structure). The AuxM (x = 9–12; M = Ge, Sn) clusters have quasi-planar structures, which suggests a lower tendency of sp3 hybridization and a similarity of electronic structure for the Ge or Sn atom. Au9Si and Au10Si have a 3D structure, which can be viewed as being built from Au8Si and Au9Si with an extra Au atom bonded to a terminal gold atom, respectively. In contrast, the quasi-planar structures of AuxM (x = 9–12; M = Ge, Sn) reflect the domination of the Au–Au interactions. Including the spin–orbit (SO) effects is very important to calculate the simulated spectrum (structural fingerprint information) in order to obtain quantitative agreement between theoretical and future experimental PES spectra.

Graphical abstract: Structural exploration of AuxM− (M = Si, Ge, Sn; x = 9–12) clusters with a revised genetic algorithm

Supplementary files

Article information

Article type
Paper
Submitted
08 Feb 2019
Accepted
27 Feb 2019
First published
06 Mar 2019
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2019,9, 7432-7439

Structural exploration of AuxM (M = Si, Ge, Sn; x = 9–12) clusters with a revised genetic algorithm

P. Huang, Y. Jiang, T. Liang, E. Wu, J. Li and J. Hou, RSC Adv., 2019, 9, 7432 DOI: 10.1039/C9RA01019J

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