Low-cost uncooled MWIR PbSe quantum dots photodiodes

Abstract

A mid-wave infrared (MWIR) uncooled PbSe-QDs/CdS p–n heterojunction photodiode has been fabricated using a wet-chemical synthesis route. This offers a low-cost alternative to traditional monocrystalline photodiodes relying on molecular beam epitaxy (MBE) technology. It was demonstrated that the post-annealing is critical to tailor the photoresponse wavelength and to improve the performance of photodiodes. After annealing at 673 K in air for 0.5 h, the ligand-free PbSe-QDs/CdS photodiode exhibits a MWIR spectral photoresponse with a cutoff wavelength of 4.2 μm at room temperature. Under zero-bias photovoltaic mode, the peak responsivity and specific detectivity at room temperature are 0.36 ± 0.04 A W⁻¹ and (8.5 ± 1) ×10⁸ cm Hz^1/2 W⁻¹, respectively. Temperature-dependent spectral response shows an abnormal intensity variation at temperatures lower than 200 K. This phenomenon is attributed to the band alignment transition from type II to type I, resulting from the positive temperature coefficient of PbSe. In addition, it was proved that In doped CdSe (CdSe:In) films could be used as a promising new candidate of infrared transparent conductive electrodes, paving the way for monolithic integration of uncooled low-cost MWIR photodiodes on Si readout circuitry.