Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers

Abstract

In this paper, the potential of engineering and manipulating the electronic heat capacity and Pauli susceptibility of pristine and perturbed hydrogenated AA-stacked graphene, SiC (silicon carbide), and h-BN (hexagonal boron nitride) bilayers is studied using a designed transverse Zeeman magnetic field and the dilute charged impurity. The tight-binding Hamiltonian model, the Born approximation and the Green’s function method describe the carrier dynamics up to a certain degree. The unperturbed results show that the heat capacity and susceptibility of all bilayers increase with different hydrogenation doping configurations. We also found that the maximum heat capacity and susceptibility relates to the chair-like and table-like configurations. Also, the graphene possesses the highest activity compared to SiC and h-BN lattices due to its zero on-site energies. For the Zeeman magnetic field-induced Schottky anomaly and the Néel temperature corresponding to the maximum electronic heat capacity, EHC_Max., and Pauli spin paramagnetic susceptibility, PSPS_Max., respectively, the pristine EHC_Max. (PSPS_Max.) decreases (increases) with the Zeeman field. On the other hand, the corresponding results for reduced table-like and reduced chair-like lattices illustrate that both EHC_Max. and PSPS_Max. decrease with the Zeeman field, on average. However, under the influence of the dilute charged impurity, the pristine EHC_Max. of graphene (SiC and h-BN) decreases (increases) with impurity concentration for all configurations while the corresponding PSPS_Max. fluctuates (decreases) for the pristine (reduced table-like and reduced chair-like) case. These findings introduce hydrogenated AA-stacked bilayers as versatile candidates for real applications.