Issue 19, 2019

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

Abstract

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs). PSUACs incorporate the urethane group for promoting adhesion to substrates and the acrylate group for enhancing the degree of cross-linking via a photo-curing reaction. Aluminium acetoacetate is introduced as a thermal curing agent that reacts with the silanols at the end of the PSUA resin, thus realizing a reliable dielectric that is barely affected by the slow polarization induced by moisture absorption. Thin films of the cross-linked PSUAC provided smooth surfaces with a root-mean-square roughness of <0.3 nm and which exhibited high breakdown voltages of >6.2 MV cm−1, while the capacitance was only slightly affected by the frequency. A self-assembled monolayer (SAM) of octadecyltrichlorosilane (ODTS) was formed on the cross-linked PSUAC dielectric to provide a hydrophobic surface with a water-contact angle of 107°. OTFTs employing a small-molecule organic semiconductor of dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (DBTTT) were fabricated using the cross-linked PSUAC as a gate dielectric. These realized a high mobility of 3.3 cm2 V−1 s−1 and an on/off ratio of >107 without any hysteresis in the transfer characteristics. The threshold voltage was shifted by about 2 V in the bias stress measurement conducted for 10 000 s on non-passivated devices exposed in air, verifying the stable characteristics of the gate dielectric layer even without passivation of the device. Flexible OTFTs on a polyimide (PI) substrate were fabricated and identical electrical properties with a mobility of 3.3 cm2 V−1 s−1 were confirmed. PSUAC can be used as a reliable gate dielectric for high-performance OTFT devices including flexible applications.

Graphical abstract: Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

Supplementary files

Article information

Article type
Paper
Submitted
10 Dec 2018
Accepted
15 Apr 2019
First published
30 Apr 2019

J. Mater. Chem. C, 2019,7, 5821-5829

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

J. Kim, E. K. Lee, J. Jung, D. Lee, Y. Yun, J. W. Chung, J. Park and J. Kim, J. Mater. Chem. C, 2019, 7, 5821 DOI: 10.1039/C8TC06236F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements