Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

Abstract

Efficiency is essential to an integrated lighting system. In this work, monolithic integration of AlGaN/GaN high electron mobility transistors (HEMTs) with vertical-structure InGaN/GaN light emitting diodes (LEDs) was studied. An Mg-doping process was investigated to reduce the interconnection resistance. As a result, its equivalent external quantum efficiency (EEQE) was 6.15% and the light output power per module area (LOPMA) of the integrated device was 12.5 W cm⁻², both of which were significantly higher than those of previously reported LED and HEMT integrated devices. Aiming at improving performances at the system level, the finding paves the way for practical application of GaN integrated lighting systems.