Issue 22, 2019

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

Abstract

5-Period ZnO/Zn0.9Mg0.1O Multiple Quantum Wells (MQWs) were fabricated by plasma-assisted molecular beam epitaxy. The dominant edge threading dislocations in epitaxial films were dramatically reduced by using GaN/Al2O3 as substrates. As a result, a record high internal quantum efficiency of 61% at 300 K was obtained for the ZnO/Zn0.9Mg0.1O MQWs.

Graphical abstract: High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

Supplementary files

Article information

Article type
Communication
Submitted
15 Mar 2019
Accepted
17 May 2019
First published
20 May 2019

J. Mater. Chem. C, 2019,7, 6534-6538

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

S. Chen, C. Xu, X. Pan, H. He, J. Huang, B. Lu and Z. Ye, J. Mater. Chem. C, 2019, 7, 6534 DOI: 10.1039/C9TC01421G

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