Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates

Abstract

We developed a patternable synthesis method of wafer-scale NbS₂, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates. NbS₂ film with high uniformity was synthesized directly on a 2-in Si wafer. NbS₂ patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS₂ electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS₂ electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.