Understanding CrGeTe3: an abnormal phase change material with inverse resistance and density contrast

Abstract

Phase change memory is an emerging nonvolatile memory technology, recently becoming the center of attention to bridge the speed gap between fast dynamic random access memory and slow flash-based solid-state drives. Lately, CrGeTe₃ has been investigated as a special phase change material with an inverse resistance and density change. This material has excellent properties such as good thermal stability, ultralow-energy glass formation process and almost zero mass-density change upon crystallization. Here, we analyzed the amorphous structure of this abnormal material in detail through ab initio simulations and discovered that the metallic-like tight atomic packing is the origin of the high carrier concentration and high mass density in the amorphous phase. Furthermore, the bonding analysis confirms that it is the short Cr–Cr bonds that lead to high packing efficiency in the amorphous local order. Our results discovered the material gene of the amorphous CrGeTe₃, paving the way for the design of high-performance memory devices based on this material.