Issue 39, 2019

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

Abstract

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620 V @ VG = −10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.

Graphical abstract: A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

Article information

Article type
Communication
Submitted
09 Jul 2019
Accepted
30 Aug 2019
First published
31 Aug 2019

J. Mater. Chem. C, 2019,7, 12075-12079

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

D. Chen, Z. Liu, J. Liang, L. Wan, Z. Xie and G. Li, J. Mater. Chem. C, 2019, 7, 12075 DOI: 10.1039/C9TC03718G

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