Issue 2, 2020
From the journal:

Chemical Communications

Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing†

Xuan Liu,a   Matthew M. Sartin,a   Yunhua Liu,*b   Zhong-Qun Tian ORCID logo a  and  Dongping Zhan ORCID logo *a  

* Corresponding authors

a State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Engineering Research Centre of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, and Graphene Industry and Engineering Research Institute, Xiamen University, Xiamen 361005, China

b National CAD Support Software Engineering Research Center, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

The interfacial electron transfer capability of Si/SiO2 wafer supported single layer graphene is optimized by thermal annealing in an inert gas environment, which facilitates its applications in both electrochemical and electronic devices.

Graphical abstract: Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

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Article information

DOI
https://doi.org/10.1039/C9CC08150J
Article type
Communication
Submitted
17 Oct 2019
Accepted
26 Nov 2019
First published
27 Nov 2019

Chem. Commun., 2020,56, 253-256

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Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing

X. Liu, M. M. Sartin, Y. Liu, Z. Tian and D. Zhan, Chem. Commun., 2020, 56, 253 DOI: 10.1039/C9CC08150J

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