Issue 66, 2020

Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure

Abstract

We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.

Graphical abstract: Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure

Supplementary files

Article information

Article type
Communication
Submitted
13 May 2020
Accepted
08 Jul 2020
First published
09 Jul 2020

Chem. Commun., 2020,56, 9481-9484

Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure

Z. Sun, D. Oka and T. Fukumura, Chem. Commun., 2020, 56, 9481 DOI: 10.1039/D0CC03431B

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