Direct evidence of N2 formation after annealing of (ZnO)1−x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga–N bonds, indicating that N in O substitution sites (NO) is not a stable configuration.
C. Bazioti, V. S. Olsen, A. Y. Kuznetsov, L. Vines and Ø. Prytz, Phys. Chem. Chem. Phys., 2020, 22, 3779 DOI: 10.1039/C9CP06025A
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