Issue 3, 2020

Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Abstract

Spintronics exhibits significant potential for a neuromorphic computing system with high speed, high integration density, and low dissipation. In this article, we propose an ultralow-dissipation skyrmion-based nanodevice composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate for neuromorphic computing. Skyrmions/skyrmion bubbles can be generated in the upper layer of an SAF with a weak anisotropy energy (Ea). Applying a weak electric field on the heterostructure, interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces a variation of the resistance of a magnetic tunneling junction that can mimic the potentiation/depression of a synapse and the leaky-integral-and-fire function of a neuron at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.

Graphical abstract: Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Supplementary files

Article information

Article type
Paper
Submitted
06 Jan 2020
Accepted
06 Feb 2020
First published
07 Feb 2020
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2020,2, 1309-1317

Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Z. Yu, M. Shen, Z. Zeng, S. Liang, Y. Liu, M. Chen, Z. Zhang, Z. Lu, L. You, X. Yang, Y. Zhang and R. Xiong, Nanoscale Adv., 2020, 2, 1309 DOI: 10.1039/D0NA00009D

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