Issue 16, 2020

Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

Abstract

As one of the emerging neuromorphic computing devices, memristors may break through the limitation of traditional computers with a von Neumann architecture. However, the development of flexible memristors is limited by the high-temperature fabrication process, large operating voltage and non-uniform distribution of resistance. The room-temperature process has attracted great attention due to its advantages of low thermal dissipation, low cost and excellent compatibility with flexible electronics. Here, we proposed a fully physical vapour deposition (PVD) process for fabricating a memristor without additional heat treatment. The device showed excellent resistive switching characteristics with ultralow set/reset voltages (0.48 V/−0.39 V), uniform distribution (10%/15%), stable retention characteristic, multilevel storage behavior and reliable flexibility (radius of 10 mm). With continuously modulated conductance, typical synaptic plasticities were simulated by our flexible biomemristor, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) and learning-forgetting curve. Furthermore, the array learning behavior like that of the human brain was simulated with these trainable biomemristors. This study paves a new way for developing low-cost, wearable, neuromorphic computing electronics at room temperature and expands the applications of artificial synapse arrays.

Graphical abstract: Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

Supplementary files

Article information

Article type
Paper
Submitted
03 Feb 2020
Accepted
26 Mar 2020
First published
27 Mar 2020

Nanoscale, 2020,12, 9116-9123

Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

T. Wang, J. Meng, Z. He, L. Chen, H. Zhu, Q. Sun, S. Ding, P. Zhou and D. W. Zhang, Nanoscale, 2020, 12, 9116 DOI: 10.1039/D0NR00919A

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