High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study

Abstract

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices. Here, a new 2D semiconductor, Na₃Sb, is proposed and investigated for the performance limits of FETs by ab initio quantum-transport simulations. Monolayer Na₃Sb shows a direct bandgap of 0.89 eV and a high phonon-limited electron mobility of up to 1.25 × 10³ cm² V⁻¹ s⁻¹. We evaluated the impact of channel lengths, gate underlaps, oxide thicknesses, and dielectrics on devices. The major figures of merits for FETs are also assessed in terms of the On–Off ratio, subthreshold swing, gate capacitance, delay time, power dissipation, and field-effect mobility, fulfilling the requirements of the International Roadmap for Devices and Systems (IRDS) for high-performance (HP) devices and demonstrating great potential for electronics with novel 2D Na₃Sb.