Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Abstract

Considerable efforts have been made to obtain better control of the switching behavior of resistive random access memory (RRAM) devices, such as using modified or multilayer switching materials. Although considerable progress has been made, the reliability and stability of the devices greatly deteriorate due to dispersed electric field caused by low permittivity surrounding materials. By introducing surrounding materials with a relatively higher dielectric constant, the RRAM devices become promising for cost-effective applications by achieving multilevel storage functionality and improved scalability. A device designed by this principle exhibits multiple distinct and non-volatile conductance states. Moreover, the issue of the increasing forming voltage during device scaling is also solved, improving the capacity of the chips and reducing the power dissipation in the process of the device miniaturization. The COMSOL simulation helps to reveal that the enhanced performance is correlated with a more concentrated electric field around the conductive filament, which is favorable for controlling the connection and rupture of the resistive filament.