Issue 29, 2020, Issue in Progress

Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles

Abstract

A strategy for optical nanothermometry using the negative thermal quenching behavior of intrinsic BiFeO3 semiconductor nanoparticles has been reported here. X-ray diffraction measurement shows polycrystalline BiFeO3 nanoparticles with a rhombohedral distorted perovskite structure. Transmission electron microscopy shows agglomerated crystalline nanoparticles around 20 nm in size. Photoluminescence measurements show that intensity of the defect level emission increases significantly with temperature, while the intensity of near band emission and other defect levels emissions show an opposite trend. The most important figures of merit for luminescence nanothermometry: the absolute (Sa) and the relative sensor sensitivity (Sr) and the temperature resolution (ΔTm) were effectively resolved and calculated. The relative sensitivity and temperature resolution values are found to be 2.5% K−1 and 0.2 K, respectively which are among the highest reported values observed so far for semiconductors.

Graphical abstract: Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles

Supplementary files

Article information

Article type
Paper
Submitted
28 Feb 2020
Accepted
15 Apr 2020
First published
30 Apr 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 16982-16986

Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles

Ž. Antić, K. Prashanthi, S. Kuzman, J. Periša, Z. Ristić, V. R. Palkar and M. D. Dramićanin, RSC Adv., 2020, 10, 16982 DOI: 10.1039/D0RA01896A

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