Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

Abstract

The rapid development of the flexible electronics industry places higher demands on the performance of flexible ferroelectric memories. In practical work, environmental factors such as high temperature, radiation and humidity may also affect the lifetime of flexible devices besides electric field and bending stress. In this paper, Hf_0.6Zr_0.4O₂ (HZO) ferroelectric thin film with excellent ferroelectric properties and high reliability was prepared on flexible mica substrate by atomic layer deposition (ALD). More importantly, the flexible HZO ferroelectric films maintain superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions. On the basis of multi-service conditions, this work marks an important step in the development of new flexible HfO₂-based ferroelectric memories from fundamental research to practical applications.