Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors

Abstract

One-dimensional semiconductor nanofibers have been regarded as one of the most promising building blocks for next-generation electronic devices. Among these semiconductor nanofibers, tin oxide (SnO₂) has been regarded as an attractive alternative for field-effect transistors (FETs) due to its high abundance, nontoxicity and low cost. However, the electronic devices based on electrospun SnO₂ nanofibers suffer from poor interfacial property and inferior performance. Here, we have proposed that the introduction of Y can be used to reduce the O vacancies in the channel layers and ethanolamine (EA) is selected as a complexing agent to enhance the interface property. It is confirmed that the SnYO nanofiber FETs based on the addition of EA exhibit better electrical performance, including a mobility of 2.70 cm² V⁻¹ s⁻¹ and a threshold voltage of 2.3 V. When the high k ZrAlO_x films are applied in FETs as dielectric layers, the SnYO nanofiber FETs exhibit optimized electrical performance with an acceptable mobility of 4.78 cm² V⁻¹ s⁻¹, a small threshold voltage of 0.72 V and a suitable on/off current ratio of ∼10⁷. This work presents a simple and low cost EA treatment method to improve the electrical performance, which provides a new perspective for commercial products based on electrospun nanofibers.