Issue 7, 2020

Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

Abstract

The oxidative instability of tin-based halide perovskites (Sn-HaP) is a culprit for inferior device performance and applications in other optoelectronic devices. Here, we have investigated the impacts of a Rb additive on the FASnI3 based device characteristics. It is observed that the RbCl additive facilitates uniform morphology with better crystal quality and suppression of oxidation of Sn2+. This results in an enhancement in the device efficiency of 3.12% for pure Sn-HaP to 5.89% for the RbCl additive with high reproducibility and superior stability. It also benefited from a higher diffusion potential and mitigation of defect activities with the RbCl additive in Sn-HaPSCs. These results corroborate that the incorporation of Rb in the FASnI3 structure plays a crucial role in improving the film growth, surface chemistry, and mitigation of trap centers.

Graphical abstract: Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
12 Nov 2019
Accepted
03 Jan 2020
First published
04 Jan 2020

J. Mater. Chem. C, 2020,8, 2307-2313

Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

D. B. Khadka, Y. Shirai, M. Yanagida and K. Miyano, J. Mater. Chem. C, 2020, 8, 2307 DOI: 10.1039/C9TC06206H

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