Issue 7, 2020

Breakthrough in high ON-state current based on Ag–GeTe8 selectors

Abstract

Selectors are crucial components for establishing high-density, massive, three-dimensional (3D) stackable novel non-volatile memory devices and neural networks. Although a lot of work has been done to develop new selectors, it is still considerably difficult to obtain selectors with ultra-high ON-state current to meet the actual device requirements, especially for phase change memory. In this work, by introducing a large amount of non-bonded Te anion defects, volatile large-sized Ag conductive filaments (CFs) are obtained, which will address the drawbacks of the low driving current of Ag CF-based selectors. The ON-state current of the proposed Ag–GeTe-based selector can reach a high value of 10 mA. Besides, the selector exhibits low leakage (<10−10 A), excellent nonlinearity (1.16 mV dev−1), high endurance (over 108 cycles) and excellent thermal stability. A breakthrough in the driving current based on the Ag CF selector helps to construct 3D integrated high-density devices that are immune to crosstalk problems.

Graphical abstract: Breakthrough in high ON-state current based on Ag–GeTe8 selectors

Supplementary files

Article information

Article type
Paper
Submitted
05 Dec 2019
Accepted
03 Jan 2020
First published
06 Jan 2020

J. Mater. Chem. C, 2020,8, 2517-2524

Breakthrough in high ON-state current based on Ag–GeTe8 selectors

S. Zhang, L. Wu, Z. Song, T. Li, X. Chen, S. Yan and M. Zhu, J. Mater. Chem. C, 2020, 8, 2517 DOI: 10.1039/C9TC06673J

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