Issue 17, 2020

Customizing coaxial stacking VS2 nanosheets for dual-band microwave absorption with superior performance in the C- and Ku-bands

Abstract

Engineering microwave absorption materials with absorption in multiple bands and strong absorption performance in the C-band remains challenging to date. Herein, coaxial stacking VS2 nanosheets (CSVNs) were customized via a facile one-step hydrothermal route for the first time and their microwave absorption (MA) properties were systematically investigated. The complex permittivity and conductivity of CSVNs could be tuned by regulating the hydrothermal reduction temperature. When the reaction temperature was 190 °C, the VS2 nanosheets exhibited unique dual-band absorption characteristics in the C-band and Ku-band. A minimum reflection loss value of −57 dB and an average absorption intensity exceeding 15 dB in both the C (4–8 GHz) and Ku (12–18 GHz) bands were obtained. For the optimized CSVNs, the qualified bandwidth with reflection loss less than −10 dB reached up to 7 GHz, which almost covered the whole measured range of the C- and Ku-bands. Notably, this desirable microwave absorption performance, which probably results from the good conductivity of the 1T-phase CSVNs in the 2H phase, the well-matched impedance and the multiple reflections induced by their distinctive stacking structure, demonstrates that CSVNs are potential outstanding absorbers. More importantly, this study provides an effective strategy to tune the microwave performance of CSVNs by tailoring their structures.

Graphical abstract: Customizing coaxial stacking VS2 nanosheets for dual-band microwave absorption with superior performance in the C- and Ku-bands

Supplementary files

Article information

Article type
Paper
Submitted
14 Feb 2020
Accepted
17 Mar 2020
First published
20 Mar 2020

J. Mater. Chem. C, 2020,8, 5923-5933

Customizing coaxial stacking VS2 nanosheets for dual-band microwave absorption with superior performance in the C- and Ku-bands

D. Zhang, H. Zhang, J. Cheng, H. Raza, T. Liu, B. Liu, X. Ba, G. Zheng, G. Chen and M. Cao, J. Mater. Chem. C, 2020, 8, 5923 DOI: 10.1039/D0TC00763C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements