Issue 98, 2021

Visible-light photoelectric response in semiconducting quaternary oxysulfide FeOCuS with anti-PbO-type structure

Abstract

A novel quaternary oxysulfide, FeOCuS has been successfully synthesized with a tetragonal anti-PbO-type structure and a visible-light bandgap of about 1.37 eV. Driven by only a 0.4 V bias voltage under simulated AM 1.5 G illumination, a high photocurrent density of 3.89 mA cm−2 has been achieved, revealing the potential optoelectronic applications.

Graphical abstract: Visible-light photoelectric response in semiconducting quaternary oxysulfide FeOCuS with anti-PbO-type structure

Supplementary files

Article information

Article type
Communication
Submitted
02 Oct 2021
Accepted
15 Nov 2021
First published
16 Nov 2021

Chem. Commun., 2021,57, 13393-13396

Visible-light photoelectric response in semiconducting quaternary oxysulfide FeOCuS with anti-PbO-type structure

W. Du, G. Zhang, P. Chen, P. Tang, J. Wang, D. Li, J. Hou and Y. Fang, Chem. Commun., 2021, 57, 13393 DOI: 10.1039/D1CC05575E

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