Issue 41, 2021

Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Abstract

A porous template has the function of relieving the stress of epitaxially grown GaN crystals and blocking dislocations. In this study, a 2 inch self-standing porous GaN crystal film was fabricated for the first time by a simple high-temperature annealing method. The influence of different annealing temperatures on the porous structure under critical annealing conditions is investigated. Theoretical calculations show that the stress on the porous GaN template is significantly reduced compared with the unannealed template. Using the metal organic chemical vapor deposition (MOCVD) method, a relaxed crack-free 60 μm thick GaN crystal film is grown on a porous GaN/sapphire substrate. The experimental results show that the stress of the GaN crystal grown on the high-temperature annealing porous template is greatly reduced, and the quality of the GaN crystal is significantly improved. Therefore, the high-temperature annealing porous template may be an excellent candidate for the growth of high-quality GaN crystals.

Graphical abstract: Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Supplementary files

Article information

Article type
Paper
Submitted
05 Aug 2021
Accepted
03 Sep 2021
First published
06 Sep 2021

CrystEngComm, 2021,23, 7245-7252

Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

L. Liu, R. Yu, G. Wang, M. Xu, S. Wang, H. Xiao, X. Hu, L. Zhang and X. Xu, CrystEngComm, 2021, 23, 7245 DOI: 10.1039/D1CE01032H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements