Issue 29, 2021

Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors

Abstract

Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this study, we suggest a novel promising strategy for suppression of dynamic disorder—tuning the molecular electrostatic potential. Specifically, we show that the intensities of the low-frequency (LF) Raman spectra for crystalline organic semiconductors consisting of π-isoelectronic small molecules (i.e. bearing the same number of π electrons)—benzothieno[3,2-b][1]benzothiophene (BTBT), chrysene, tetrathienoacene (TTA) and naphtho[1,2-b:5,6-b′]dithiophene (NDT)—differ significantly, indicating significant differences in the dynamic disorder. This difference is explained by suppression of the dynamic disorder in chrysene and NDT because of stronger intermolecular electrostatic interactions. As a result, guidelines for the increase of the crystal rigidity for the rational design of high-mobility organic semiconductors are suggested.

Graphical abstract: Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
12 Apr 2021
Accepted
17 Jun 2021
First published
17 Jun 2021

Phys. Chem. Chem. Phys., 2021,23, 15485-15491

Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors

A. Yu. Sosorev, O. D. Parashchuk, N. V. Tukachev, D. R. Maslennikov, D. I. Dominskiy, O. V. Borshchev, M. S. Polinskaya, M. S. Skorotetcky, O. G. Kharlanov and D. Yu. Paraschuk, Phys. Chem. Chem. Phys., 2021, 23, 15485 DOI: 10.1039/D1CP01599K

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