Synthesis, structure, mobility and memristor properties of tetragonal CH3NH3PbBr3 perovskite single crystals

Abstract

The structure, mobility and memristor properties of tetragonal CH₃NH₃PbBr₃ single crystals (T-MAPbBr₃ SC) are rarely reported. In this study, we synthesized T-MAPbBr₃ SC with the P4/mmm (123) space group by the growing, dropping and growing (GDG) crystal seed method. A CH₃NH₃⁺ cation is a disordered state in T-MAPbBr₃ SC. The mobility values of T-MAPbBr₃ SC under light and dark conditions are 464.28 and −1685.3 cm² V⁻¹ s⁻¹, respectively. The carrier types under light and dark conditions are holes and electrons, respectively. The memristor based on T-MAPbBr₃ SC has a wide and low operating voltage window (0–0.9 V). The high and low resistances of the memristor based on T-MAPbBr₃ SC achieve values of 41 and 0.35 GΩ, respectively. The values of high and low resistances are relatively stable for 100 cycles. Thus, the memristor device based on T-MAPbBr₃ SC has good applications in the field of memristors.