p-Type molecular doping by charge transfer in halide perovskite

Abstract

Electronic technologies critically rely on the ability to broadly dope the active semiconductor; yet the promising class of halide perovskite semiconductors so far does not allow for significant control over carrier type (p- or n-) and density. The molecular doping approach offers important opportunities for generating free carriers through charge transfer. In this work, we demonstrate effective p-doping of MAPb_0.5Sn_0.5I₃ films using the molecular dopant F4TCNQ as a grain boundary coating, offering a conductivity and hole density tuning range of up to five orders of magnitude, associated with a 190 meV Fermi level down-shift. While charge transfer between MAPb_0.5Sn_0.5I₃ and F4TCNQ appears efficient, dopant ionization decreases with increasing Pb content, highlighting the need for appropriate energy offset between host and dopant molecule. Finally, we show that electrical p-doping impacts the perovskite optoelectronic properties, with a hole recombination lifetime increase of over one order of magnitude, suggesting passivation of deep traps.