Ga2O3 based multilevel solar-blind photomemory array with logic, arithmetic, and image storage functions

Abstract

Photomemories offer great opportunities for multifunctional integration of optical sensing, data storage, and processing into one single device. However, little attention has been paid to photomemories working in the solar-blind region so far, which may have unique advantages of insusceptibility to ambient light and higher capacity. Herein, we propose and demonstrate a Ga₂O₃ based solar-blind photomemory array with logic, arithmetic, and optoelectronic memory functions. The device shows n-type field effect-transistor performance with an on/off ratio as high as 10⁶, a responsivity of 8 × 10³ A W⁻¹, and a detectivity of 1.42 × 10¹⁴ Jones, all of which are amongst the best values ever reported for Ga₂O₃ based photodetectors. Based on the trapping and de-trapping process of holes in Ga₂O₃, multilevel data storage can be realized from the device. Simultaneously, the optical and electrical mixed basic logic of reconfigurable “AND” and “OR” operations have been realized in a single cell through the co-regulation of solar-blind light and the grid voltage. In addition, the photomemory can perform counting and addition operations, and the photomemory array can be utilized to realize solar-blind image storage. The results suggest that Ga₂O₃ may have potential applications in high-performance information storage, computing, and communications.