Interface engineering of moisture-induced ionic albumen dielectric layers through self-crosslinking of cysteine amino acids for low voltage, high-performance organic field-effect transistors

Abstract

The interface roughness between the semiconducting and dielectric layers of organic field-effect transistors (OFETs) plays a crucial role in the charge transport mechanism through the device. Here we report the interface engineering of a moisture induced ionic albumen material through systematic control of the temperature-dependent self-crosslinking of cysteine amino acids in the dielectric layer. The evolution of the surface morphologies of albumen and pentacene semiconducting films has been studied to achieve a smooth interface for enhanced charge transport. A structural transition of pentacene films from crystalline dendrite to amorphous was induced by the higher surface roughness of the albumen film. The devices showed a high transconductance of 11.68 μS at a lower threshold voltage of −0.9 V.