Issue 17, 2021

Switching the resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptor design

Abstract

Emerging organic resistive switching memory (ORSM) devices, in which active organic materials possess at least two stable resistance states have attracted considerable attention for their intriguing nonvolatile memory properties. Herein, solution-processed binary ORSM devices incorporating polymer donors (D) of poly(N-vinylcarbazole) (PVK) and small molecular acceptors (A) of 1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene (OXD-7) were first investigated. By varying the blending concentration of OXD-7, we demonstrated concentration-dependent resistance switching. To further mediate the memory characteristics, acceptors of both OXD-7 and butylphenyl-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) were incorporated into PVK donors to form a D–A–A system. The 6 wt% PBD-based ORSM device presented ternary resistive memory characteristics with well-separated current ratios of 1 : 10 : 104 between “OFF”, “ON1” and “ON2” states, while three conductivity states held for 104 s as a function of the time. To unveil the resistive switching mechanism of non-volatile memories, a detailed analysis of electrical properties and intertrap charge transfer in D–A and D–A–A systems was also performed.

Graphical abstract: Switching the resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptor design

Supplementary files

Article information

Article type
Paper
Submitted
06 Jan 2021
Accepted
12 Apr 2021
First published
12 Apr 2021

J. Mater. Chem. C, 2021,9, 5643-5651

Switching the resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptor design

S. Pan, Z. Zhu, H. Yu, W. Lan, B. Wei and K. Guo, J. Mater. Chem. C, 2021, 9, 5643 DOI: 10.1039/D1TC00071C

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