Issue 39, 2021

Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

Abstract

The discovery of high-efficiency broadband near-infrared (NIR) emission phosphors for light-emitting diodes (pc-LEDs) is of importance for optoelectronic devices and their emerging applications. Herein, a highly efficient broadband NIR emission phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full width at half maximum (FWHM) of 160 nm (∼2230 cm−1) is developed via a distorted octahedral site occupation strategy. Upon 480 nm blue-light excitation, the optimal phosphor composition LiSc0.93Ge2O6:0.07Cr3+ presents an internal quantum efficiency (IQE) of 72.6% and high external quantum efficiency (EQE) of 39.9%. A NIR LED is fabricated based on this phosphor and a blue InGaN chip, which shows a maximum NIR output power of 407.3 mW at 300 mA driving current with a photoelectric conversion efficiency of ∼8.9%, suggesting its high promise for night-vision applications. This work provides a new strategy for achieving high-efficiency Cr3+-doped NIR emission phosphors.

Graphical abstract: Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

Supplementary files

Article information

Article type
Paper
Submitted
01 Jul 2021
Accepted
03 Sep 2021
First published
04 Sep 2021

J. Mater. Chem. C, 2021,9, 13640-13646

Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

X. H. Chen, E. H. Song, Y. Y. Zhou, F. Q. He, J. Q. Yang and Q. Y. Zhang, J. Mater. Chem. C, 2021, 9, 13640 DOI: 10.1039/D1TC03057D

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