Issue 23, 2022

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Abstract

A rapid growth strategy for n-AlGaN with fine electrical properties has been put forward aiming at deep-ultraviolet light emitters. By shortening the terrace width using sapphire with large miscut angles, a growth window allowing a higher rate as well as a lower temperature is realized for Al-rich AlGaN, which is beneficial for the control of surface morphology and compensation defects in n-AlGaN. Specifically, a rate of 2.3 μm h−1 for n-Al0.55Ga0.45N is achieved at 1050 °C on sapphire with a miscut angle of 0.5°, where the typical step-terrace morphology demonstrates the step-flow growth of n-Al0.55Ga0.45N. In addition, impressive electrical properties of n-Al0.55Ga0.45N are obtained at the appropriate low growth temperature (1050 °C), with the electron concentration and conductivity being 1.34 × 1019 cm−3 and 102.8 S cm−1, respectively. As such, a 280 nm deep-ultraviolet light-emitting diode structure, containing 1.5 μm-thick n-Al0.55Ga0.45N, is accomplished within 3.5 h, which meanwhile exhibits an obvious reduction of the operating voltage in the flip-chip configuration of devices.

Graphical abstract: Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Supplementary files

Article information

Article type
Paper
Submitted
15 Mar 2022
Accepted
03 May 2022
First published
05 May 2022

CrystEngComm, 2022,24, 4251-4255

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

J. Wang, F. Xu, J. Lang, X. Fang, L. Wang, X. Guo, C. Ji, X. Kang, Z. Qin, X. Yang, X. Wang, W. Ge and B. Shen, CrystEngComm, 2022, 24, 4251 DOI: 10.1039/D2CE00362G

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