Enhanced field emission of quasi-aligned 3C-SiC nanoarrays alloyed with tiny Co nano-tips

Abstract

We report for the first time by alloying Co nanoparticles on the crucial top parts of the SiC NWs, the turn-on field and the maximum current density can be drastically improved from 1.35 V μm⁻¹ and 0.15 mA cm⁻² to 1.1 V μm⁻¹ and 0.45 mA cm⁻² at 1.8 V μm⁻¹ with a field-enhancement factor up to 1.62 × 10⁴ and 5985, for Co/SiC nanoarrays (SiC-NAs), respectively. The superior field emission properties of the as-synthesized Co/SiC-NAs can be attributed to the enhancement from the localized charge-transfer-induced electronic band edge changes with Co nanotip decoration that leads to the work function reduction.