Issue 24, 2022

Tuning of hole carrier density in p-type α-SnWO4 by exploiting oxygen defects

Abstract

The development of p-type oxide semiconductors has shown promise in overcoming limitations restricting the practical usage of oxide semiconductors and the realization of innovative functional devices. Through numerous studies based on both experimental and theoretical approaches, several state-of-the-art p-type oxide semiconductors have been discovered. However, one of the challenges concerning these p-type oxide semiconductors is on tuning the hole carrier density. In this study, precise tuning of the hole carrier density in α-SnWO4 based on thermodynamic condition control was demonstrated. A detailed investigation of the crystal structure via X-ray diffraction, extended X-ray absorption fine structures, and density functional theory calculations revealed the role of oxygen defects, such as oxygen vacancies and interstitials, in tuning the hole carrier density. This study shows the importance of fine-tuning of oxygen defects based on thermodynamic condition control for the emergence and improvement of p-type semiconducting properties in Sn2+-based oxides.

Graphical abstract: Tuning of hole carrier density in p-type α-SnWO4 by exploiting oxygen defects

Supplementary files

Article information

Article type
Paper
Submitted
11 Jul 2022
Accepted
07 Nov 2022
First published
08 Nov 2022
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2022,3, 9111-9116

Tuning of hole carrier density in p-type α-SnWO4 by exploiting oxygen defects

M. Minohara, Y. Dobashi, N. Kikuchi, A. Samizo, T. Honda, X. He, T. Katase, T. Kamiya, K. Nishio and Y. Aiura, Mater. Adv., 2022, 3, 9111 DOI: 10.1039/D2MA00815G

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