Issue 23, 2022

Exciton tuning in monolayer WSe2via substrate induced electron doping

Abstract

We report large exciton tuning in WSe2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1–2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO2. As the evidence of doping from HOPG to WSe2, a drastic increase of the intensity ratio of trions to neutral excitons was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2/HOPG, WSe2/hBN, and WSe2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2, which plays a central role in the fundamental understanding and further device development.

Graphical abstract: Exciton tuning in monolayer WSe2via substrate induced electron doping

Supplementary files

Article information

Article type
Paper
Submitted
28 Jul 2022
Accepted
25 Oct 2022
First published
25 Oct 2022
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2022,4, 5102-5108

Exciton tuning in monolayer WSe2via substrate induced electron doping

Y. Pan, M. Rahaman, L. He, I. Milekhin, G. Manoharan, M. A. Aslam, T. Blaudeck, A. Willert, A. Matković, T. I. Madeira and D. R. T. Zahn, Nanoscale Adv., 2022, 4, 5102 DOI: 10.1039/D2NA00495J

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