Anisotropic dependence of radiation from excitons in Ga2O3/MoS2 heterostructure

Abstract

The anisotropic dependence of radiation arising from exciton recombination in the Ga₂O₃/MoS₂ heterostructure is investigated, using density functional theory and the Bethe–Salpeter equation. The wurtzite (WZ) and zinc blende (ZB) structures of the Ga₂O₃ monolayer with ferroelectric (FE) properties are assembled with a MoS₂ monolayer. Projected band structure, charge transfer and life time of excitons are discussed, to analyze which transition may be important to the creation of excitons from the electron–hole pair. A general formula of the angle-dependent intensities of radiation is derived. The characteristics of angle-dependent intensities that are closely related to the dipole moment of excitons are discussed, from the viewpoint of in-plane and out-of-plane polarizations. These predictions on radiation of the Ga₂O₃/MoS₂ heterostructure should guide exciton dynamics in low dimensional systems and rational design of optoelectronic devices.